Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering
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DOI: 10.1007/s11182-018-1302-0
Abstract: The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity… read more here.
Keywords: magnetron sputtering; properties gallium; oxide films; obtained magnetron ... See more keywords