A New Method of Obtaining an n–p-Structure on the Basis of the Defective Semiconductor AgIn5S8
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DOI: 10.1007/s11182-018-1277-x
Abstract: The type of electrical conductivity of А1В35С68 semiconductor compounds with defective crystalline structure is modified by the influence of powerful laser radiation. It is shown that at certain power and wavelength of laser radiation acting… read more here.
Keywords: semiconductor; basis; new method; obtaining structure ... See more keywords