The external electric‐field‐induced Schottky‐to‐ohmic contact transition in graphene/As2S3 interface: A study by the first principles
Sign Up to like & getrecommendations! Published in 2020 at "International Journal of Energy Research"
DOI: 10.1002/er.6070
Abstract: Graphene‐based vertical stacking heterojunction has attracted more and more attentions in optoelectronics, nanoelectronics, and spintronics field. A low Schottky barrier height (SBH) or a low‐resistance ohmic contact is desired in practical applications. In our current… read more here.
Keywords: graphene as2s3; field; external electric; ohmic contact ... See more keywords
Ohmic contact formation mechanisms of TiN film on 4H–SiC
Sign Up to like & getrecommendations! Published in 2020 at "Ceramics International"
DOI: 10.1016/j.ceramint.2019.11.206
Abstract: Abstract The atomic structure, interfacial charge distribution, bonding nature, and interfacial electronic states of a 4H–SiC/TiN interface are systematically investigated to understand the Ohmic contact formation mechanisms of TiN to 4H–SiC. The experiment results clearly… read more here.
Keywords: mechanisms tin; ohmic contact; tin; contact formation ... See more keywords
Direct determination of the barrier height of Au ohmic-contact on a hydrogen-terminated diamond (001) surface
Sign Up to like & getrecommendations! Published in 2017 at "Diamond and Related Materials"
DOI: 10.1016/j.diamond.2016.09.015
Abstract: Abstract The barrier height ϕ B of Au ohmic-contact on hydrogen-terminated p-type surface conductive layer (SCL) made on a boron-doped diamond (001) substrate has been directly determined by X-ray photoelectron spectroscopy (XPS). For this purpose,… read more here.
Keywords: barrier height; ohmic contact; diamond; contact ... See more keywords
Improved performance of SiC radiation detectors due to optimized ohmic contact electrode by graphene insertion
Sign Up to like & getrecommendations! Published in 2021 at "Diamond and Related Materials"
DOI: 10.1016/j.diamond.2021.108355
Abstract: Abstract SiC as a typical wide bandgap semiconductor has exhibited potential application in alpha particle detectors. However, due to the comparatively high annealing temperature required for traditional fabrication technique of ohmic electrode, it is easy… read more here.
Keywords: ohmic contact; performance; electrode; graphene ... See more keywords
Investigation of n-ohmic contact of vertical GaN-based light-emitting diodes on graphite substrate with Ag-In bonding
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2016.11.022
Abstract: Abstract Vertical light-emitting diodes (VLEDs) were successfully transferred from a GaN-based sapphire substrate to a graphite substrate by using low-temperature and cost-effective Ag-In bonding, followed by the removal of the sapphire substrate using a laser… read more here.
Keywords: ohmic contact; graphite substrate; emitting diodes; light emitting ... See more keywords
Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies
Sign Up to like & getrecommendations! Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105491
Abstract: Abstract The aspects of Si+ implantation for low resistivity ohmic contact formation to gallium nitride (GaN) with moderate annealing temperatures for dopant activation were studied: encapsulation layer and temperature for activation annealing, and implantation fluence.… read more here.
Keywords: ohmic contact; formation; retarding layer; activation ... See more keywords
Palladium forms Ohmic contact on hydrogen-terminated diamond down to 4 K
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/1.5141775
Abstract: A hydrogen-terminated diamond (H-terminated diamond) surface supports a two-dimensional (2D) p-type surface conductivity when exposed to the atmosphere, as a result of the surface transfer doping process. The formation of reliable Ohmic contacts that persist… read more here.
Keywords: hydrogen terminated; terminated diamond; ohmic contact; diamond ... See more keywords
A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp2-carbon
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0009813
Abstract: Generally, high temperature annealing treatment (>950 °C) is required to form Ni/SiC Ohmic contact. Some research believes that the specific contact resistance could be improved by the increase in sp2-carbon at the Ni/SiC interface. In this… read more here.
Keywords: contact resistance; carbon; sp2 carbon; ohmic contact ... See more keywords
Low-temperature p-type ohmic contact to WSe2 using p+-MoS2/WSe2 van der Waals interface
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DOI: 10.1063/5.0016468
Abstract: This study demonstrates a low-temperature Ohmic contact to WSe2 using a van der Waals (vdW) junction between highly p-doped MoS2 (p+-MoS2) and WSe2. p+-MoS2 exhibits a large work function comparable to that of a well-known… read more here.
Keywords: temperature; mos2 wse2; ohmic contact; wse2 ... See more keywords
Enhanced p-type Ohmic contact performance in FCLEDs by manipulating thermal stress distribution to suppress Ag agglomeration
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0148796
Abstract: The implementation of reflective p-type Ohmic contact is an effective way to solve current crowding and improve the optoelectronic performance of flip-chip light-emitting diodes (FCLEDs). Here, we investigate the effects of annealing temperature, annealing time,… read more here.
Keywords: stress; contact; stress distribution; type ohmic ... See more keywords
Effect of TiN barrier layer in Cu-based Ohmic contact of AlGaN/GaN High Electron Mobility Transistor
Sign Up to like & getrecommendations! Published in 2023 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/acda56
Abstract: Ti/TiN/Cu is established to be an enabling alternative to the better-known Au-based ohmic contact metals such as Ti/Al/Ni/Au. The Cu-based option delivers lower contact resistance and smoother surface morphology and is proven to be compatible… read more here.
Keywords: based ohmic; algan gan; contact; layer ... See more keywords