Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07020-0
Abstract: Previous studies showed that cobalt silicide can form ohmic contacts to p-type 6H-SiC by directly reacting cobalt with 6H-SiC. Similar results can be achieved on 4H-SiC, given the similarities between the different silicon carbide polytypes.… read more here.
Keywords: silicon carbide; self aligned; ohmic contacts; cobalt silicide ... See more keywords
Ohmic contacts to n-type 3C-SiC using Cr/Ni/Au and Ni/Cr/Au metallizations
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.111016
Abstract: Abstract The electrical characteristics of Cr/Ni/Au and Ni/Cr/Au contacts to n-type 3C-SiC have been examined using a two-contact circular test structure. In Ni/Cr/Au contacts with Ni as contact layer and Cr as intermediate layer, both… read more here.
Keywords: using metallizations; contacts type; layer; ohmic contacts ... See more keywords
Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.02.031
Abstract: Abstract This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm thick, have been sputtered on the back-side of… read more here.
Keywords: morphological electrical; ohmic contacts; process; laser annealing ... See more keywords
Development of Low-Resistance Ohmic Contacts with Bilayer NiO/Al-Doped ZnO Thin Films to p-type GaN.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c21106
Abstract: The fabrication of low-resistance and thermally stable Ohmic contacts is essential for the realization of reliable GaN power devices. In the particular case of p-type GaN, a thin Ni/Au bilayer is commonly used for Ohmic… read more here.
Keywords: ohmic contacts; contact; type gan; resistance ... See more keywords
Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures.
Sign Up to like & getrecommendations! Published in 2017 at "ACS nano"
DOI: 10.1021/acsnano.6b07832
Abstract: Large-area two-dimensional (2D) heterojunctions are promising building blocks of 2D circuits. Understanding their intriguing electrostatics is pivotal but largely hindered by the lack of direct observations. Here graphene-WS2 heterojunctions are prepared over large areas using… read more here.
Keywords: graphene ws2; ohmic contacts; electrostatics; microscopy ... See more keywords
Double-Sided Nonalloyed Ohmic Contacts to Si-doped GaAs for Plasmoelectronic Devices
Sign Up to like & getrecommendations! Published in 2019 at "ACS Omega"
DOI: 10.1021/acsomega.8b03260
Abstract: There is increasing demand for the ability to form ohmic contacts without lossy intermediate layers on both the top and bottom sides of metal–semiconductor–metal plasmoelectronic devices such as quantum cascade lasers and metasurface photodetectors. Although… read more here.
Keywords: plasmoelectronic devices; nonalloyed ohmic; ohmic contacts; doped gaas ... See more keywords
Very low-resistance Mo-based Ohmic contacts to GeTe
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4990407
Abstract: Low-resistance and thermally stable Ohmic contacts are essential for radio frequency switches based on the unique phase change properties of GeTe. Herein, Mo-based Ohmic contacts to p-type GeTe are reported, including the effect of pre-metallization… read more here.
Keywords: contact resistance; resistance based; low resistance; ohmic contacts ... See more keywords
Selective etching of hexagonal boron nitride by high-pressure CF4 plasma for individual one-dimensional ohmic contacts to graphene layers
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0022557
Abstract: We describe a technique for fabricating one-dimensional Ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved… read more here.
Keywords: graphene layers; ohmic contacts; graphene; one dimensional ... See more keywords
Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing
Sign Up to like & getrecommendations! Published in 2019 at "Chinese Physics B"
DOI: 10.1088/1674-1056/28/3/037302
Abstract: The physical mechanisms of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures by laser annealing and rapid thermal annealing are systematically investigated. The microstructures indicate that a better surface morphology and an intact contact interface are formed… read more here.
Keywords: mechanism; ohmic contacts; contacts algan; algan gan ... See more keywords
Optimization of Ohmic Contacts to n -Type Ga As Nanowires
Sign Up to like & getrecommendations! Published in 2018 at "Physical review applied"
DOI: 10.1103/physrevapplied.10.034024
Abstract: Group III-group V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions and the spatial separation of carriers from the wire surface render electrical contacting difficult. Systematically… read more here.
Keywords: ohmic contacts; contact resistances; type nanowires; contacts type ... See more keywords
Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Access"
DOI: 10.1109/access.2018.2861323
Abstract: Operating temperature distributions in AlGaN/GaN gateless and gated devices are characterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of ohmic… read more here.
Keywords: temperature; ohmic contacts; rise; rise channel ... See more keywords