Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit
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DOI: 10.1016/j.microrel.2019.113454
Abstract: Abstract The paper reports the results of a study based on experimental data and finite element simulations about the failure mechanism of 650 V p-doped GaN power HEMT operated in short circuit condition. The study focuses… read more here.
Keywords: operated short; failure; short circuit; gan power ... See more keywords