Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf0.5Zr0.5O2 thin films controlled by oxygen partial pressures during the sputtering deposition process
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DOI: 10.1039/d0tc01105c
Abstract: To control the polarization switching characteristics of ferroelectric HfxZr1−xO2 (HZO) thin films, the effects of oxygen partial pressure (PO2) during the sputtering deposition of HZO and the area ratio (SI/SF) of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) gate stacks… read more here.
Keywords: sputtering deposition; thin films; operations ferroelectric; oxygen partial ... See more keywords