Introducing Optical Cascode GaN HEMT
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DOI: 10.1109/ted.2017.2657498
Abstract: A novel optically activated cascode gallium nitride (GaN) high-electron-mobility transistor (HEMT) is introduced and evaluated in this paper. Furthermore, optical triggering of GaN HEMT structures by cost-effective and high-power long-wavelength light sources is proposed for… read more here.
Keywords: cascode gan; cascode; gan hemt; optical cascode ... See more keywords