Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning
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DOI: 10.1088/1674-4926/39/12/126002
Abstract: The cleaning of copper interconnect chemical mechanical polishing (CMP) is a key process in integrated circuits (ICs) fabrication. Colloidal silica, which is used as the abrasive material in copper CMP slurry, is considered as the… read more here.
Keywords: abrasive particles; cleaning process; optimization cleaning; cmp ... See more keywords