Optimizing interferences of DUV lithography on SOI substrates for the rapid fabrication of sub-wavelength features
Sign Up to like & getrecommendations! Published in 2021 at "Nanotechnology"
DOI: 10.1088/1361-6528/abe3b6
Abstract: Scalable fabrication of Si nanowires with a critical dimension of about 100 nm is essential to a variety of applications. Current techniques used to reach these dimensions often involve e-beam lithography or deep-UV (DUV) lithography… read more here.
Keywords: soi substrates; fabrication; duv lithography; lithography ... See more keywords