Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs
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DOI: 10.1109/ted.2020.2989421
Abstract: This article reports on the experimental and analytical determination of the optimum carbon concentration in GaN to achieve enhanced breakdown in AlGaN/GaN high-electron mobility transistors (HEMTs). The lateral breakdown voltage increases when carbon doping is… read more here.
Keywords: concentration gan; breakdown; carbon concentration; optimum carbon ... See more keywords