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Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400457
Abstract: In‐Al‐Sn‐O (IATO) is a very promising novel amorphous oxide as the active layer of thin film transistors (TFTs). Herein, IATO TFTs are first fabricated with the effects of annealing on IATO films and TFTs being…
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Keywords:
optoelectronic artificial;
300 annealed;
artificial synapses;
film transistors ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c14029
Abstract: Neuromorphic computing, which mimics brain function, can address the shortcomings of the "von Neumann" system and is one of the critical components of next-generation computing. The use of light to stimulate artificial synapses has the…
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Keywords:
amorphous inalzno;
synaptic devices;
optoelectronic artificial;
artificial synaptic ... See more keywords
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Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.4c05316
Abstract: Today's computing systems, to meet the enormous demands of information processing, have driven the development of brain-inspired neuromorphic systems. However, there are relatively few optoelectronic devices in most brain-inspired neuromorphic systems that can simultaneously regulate…
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Keywords:
optoelectronic artificial;
mxene hfo2;
artificial synapses;
logic ... See more keywords
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Published in 2025 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/adfcdc
Abstract: Recently, heterojunction-based optoelectronic artificial synaptic devices present a promising avenue for the advancement of neuromorphic computing. However, the sophisticated fabrication procedures have impeded their future applications. In this work, a low-cost solution process is employed…
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Keywords:
optoelectronic artificial;
heterojunction;
pss izo;
neuromorphic computing ... See more keywords