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   Articles with "optoelectronic memory" as a keyword



Fast, Multi‐Bit, and Vis‐Infrared Broadband Nonvolatile Optoelectronic Memory with MoS2/2D‐Perovskite Van der Waals Heterojunction

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recommendations! Published in 2022 at "Advanced Materials"

DOI: 10.1002/adma.202208664

Abstract: Nonvolatile optoelectronic memory (NVOM) integrating the functions of optical sensing and long‐term memory can efficiently process and store a large amount of visual scene information, which has become the core requirement of multiple intelligence scenarios.… read more here.

Keywords: infrared broadband; mos2; vis infrared; memory ... See more keywords

Ferroelectric Optoelectronic Memory Based on p-GaN/ZnGa2O4/BaTiO3/n-ITO Heterojunction with Integrated Sensing and Logic Operations.

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recommendations! Published in 2025 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.4c19505

Abstract: Ferroelectric optoelectronic memories, capable of integrating sensing, computing, and storage functionalities, hold significant potential in the fields of artificial intelligence and the Internet of Things. In this study, a nonvolatile p-GaN/ZnGa2O4/BaTiO3/n-ITO ferroelectric optoelectronic memory is… read more here.

Keywords: memory; znga2o4 batio3; ferroelectric optoelectronic; optoelectronic memory ... See more keywords

Integrating ultraviolet sensing and memory functions in gallium nitride-based optoelectronic devices.

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recommendations! Published in 2024 at "Nanoscale horizons"

DOI: 10.1039/d3nh00560g

Abstract: Optoelectronic devices present a promising avenue for emulating the human visual system. However, existing devices struggle to maintain optical image information after removing external stimuli, preventing the integration of image perception and memory. The development… read more here.

Keywords: memory; optoelectronic memory; memory functions; sensing memory ... See more keywords

Thin film transistors integrating CsPbBr3 quantum dots for optoelectronic memory application

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recommendations! Published in 2020 at "Journal of Physics D: Applied Physics"

DOI: 10.1088/1361-6463/abcbc0

Abstract: All-inorganic perovskite cesium lead bromide (CsPbBr3) quantum dots (QDs) have been used as charge storage centers in floating-gate transistors. In this work, CsPbBr3 QDs are integrated into thin film transistors to create transistor-based memory. Unlike… read more here.

Keywords: optoelectronic memory; semiconductor; cspbbr3 qds; memory ... See more keywords