Gate-tunable and high optoelectronic performance in multilayer WSe2 P–N diode
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DOI: 10.1039/c8tc04295k
Abstract: Two-dimensional (2D) material-based P–N junctions are unique building blocks for next-generation optoelectronics with the advantages of atomic thinness, flexibility and low cost. However, their device performances are limited due to either weak photo-absorption or low-quality… read more here.
Keywords: multilayer wse2; tunable high; high optoelectronic; optoelectronic performance ... See more keywords