Observation of Strong Bulk Damping‐Like Spin‐Orbit Torque in Chemically Disordered Ferromagnetic Single Layers
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202005201
Abstract: Strong damping‐like spin‐orbit torque (τDL) has great potential for enabling ultrafast energy‐efficient magnetic memories, oscillators, and logic. So far, the reported τDL exerted on a thin‐film magnet must result from an externally generated spin current… read more here.
Keywords: spin orbit; ferromagnetic single; damping like; spin ... See more keywords
Quantum Sensing and Imaging of Spin–Orbit‐Torque‐Driven Spin Dynamics in the Non‐Collinear Antiferromagnet Mn3Sn
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202200327
Abstract: Novel non‐collinear antiferromagnets with spontaneous time‐reversal symmetry breaking, non‐trivial band topology, and unconventional transport properties have received immense research interest over the past decade due to their rich physics and enormous promise in technological applications.… read more here.
Keywords: topology; orbit torque; spin orbit; non collinear ... See more keywords
Switching of Perpendicular Magnetization by Spin-Orbit Torque.
Sign Up to like & getrecommendations! Published in 2023 at "Advanced materials"
DOI: 10.1002/adma.202300853
Abstract: Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical switching of such perpendicular… read more here.
Keywords: perpendicular magnetization; orbit torque; spin; spin orbit ... See more keywords
Observation of Real‐Time Spin‐Orbit Torque Driven Dynamics in Antiferromagnetic Thin Film
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Materials"
DOI: 10.1002/adma.202417240
Abstract: In the burgeoning field of spintronics, antiferromagnetic materials (AFMs) are attracting significant attention for their potential to enable ultra‐fast, energy‐efficient devices. Thin films of AFMs are particularly promising for practical applications due to their compatibility… read more here.
Keywords: spin orbit; observation; orbit torque; time ... See more keywords
In‐Memory Mathematical Operations with Spin‐Orbit Torque Devices
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202202478
Abstract: Analog arithmetic operations are the most fundamental mathematical operations used in image and signal processing as well as artificial intelligence (AI). In‐memory computing (IMC) offers a high performance and energy‐efficient computing paradigm. To date, in‐memory… read more here.
Keywords: orbit torque; mathematical operations; arithmetic operations; spin orbit ... See more keywords
Harnessing Time-Dependent Magnetic Texture Dynamics via Spin-Orbit Torque for Physics-Enhanced Neuromorphic Computing.
Sign Up to like & getrecommendations! Published in 2025 at "Advanced science"
DOI: 10.1002/advs.202513946
Abstract: Performing visual recognition and combinatorial optimization simultaneously on a single multifunctional neuromorphic computing platform offers significant advantages in terms of efficiency, real-time processing, and integrated decision-making. However, the advances are hindered by hardware constraints. Here, a… read more here.
Keywords: orbit torque; time; neuromorphic computing; spin orbit ... See more keywords
A Spin–Orbit‐Torque Memristive Device
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201800782
Abstract: Memristors, demonstrated by solid‐state devices with continuously tunable resistance, have emerged as a new paradigm for self‐adaptive networks that require synapse‐like functions (artificial synapse, for example). Spin‐based memristors offer advantages over other types of memristors… read more here.
Keywords: spin orbit; torque memristive; memristive device; orbit torque ... See more keywords
High‐Efficiency Spin–Orbit Torque Switching Using a Single Heavy‐Metal Alloy with Opposite Spin Hall Angles
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000793
Abstract: Spin–orbit torque (SOT) induced perpendicular magnetization switching in Pt1‐xGdx/Co/Al2O3 heterostructure with x = 0, 0.02, 0.14, 0.30, and 0.33 is investigated. With in‐plane charge current flowing through the Pt1‐xGdx layer, field‐free current‐induced magnetization switching is… read more here.
Keywords: spin orbit; hall angles; spin; opposite spin ... See more keywords
Multi‐State Magnetic Tunnel Junction Programmable by Nanosecond Spin‐Orbit Torque Pulse Sequence
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202001133
Abstract: Multi‐state spin‐orbit torque (SOT) switching, particularly in magnetic tunnel junction (MTJ) geometry, is promising hardware for artificial intelligence due to its potential to form artificial neurons and to increase storage density per bit. Here, multi‐state… read more here.
Keywords: multi state; spin orbit; orbit torque; state ... See more keywords
Current Induced Field‐Free Switching in a Magnetic Insulator with Enhanced Spin‐Orbit Torque
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202300785
Abstract: The energy‐efficient spin‐orbit torque (SOT) based devices are essential for future memory and logic technologies. To realize a deterministic switching, an external in‐plane magnetic field is usually needed to break the symmetry, which becomes an… read more here.
Keywords: spin orbit; field free; orbit torque; free switching ... See more keywords
Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202500022
Abstract: Spin‐orbit torque‐driven magnetic random‐access memory (SOT‐MRAM) is one of the promising candidates for next‐generation memory technologies beyond Moore's law. Due to its separation of writing and reading channels, the 3‐terminal device design significantly improves the… read more here.
Keywords: sot mram; sot; orbit torque; field free ... See more keywords