A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications
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DOI: 10.1002/advs.201900024
Abstract: Abstract Leakage interference between memory cells is the primary obstacle for enlarging X‐point memory arrays. Metal‐filament threshold switches, possessing excellent selectivity and low leakage current, are developed in series with memory cells to reduce sneak… read more here.
Keywords: ordered nanodots; memory; leakage; selector ... See more keywords