Gallium vacancy ordering in Ga2Se3 thin layers on Si(100), Si(111), and Si(123) substrates
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DOI: 10.1134/s1063774517050121
Abstract: Thin Ga2Se3 layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric gallium vacancy ordering at different… read more here.
Keywords: 100 111; ordering ga2se3; 111 123; gallium vacancy ... See more keywords