Percolation-driven bandgap narrowing and magnetic ordering in Ni++-implanted GaN
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DOI: 10.1063/5.0280805
Abstract: Ion implantation introduces structural disorder in semiconductors, yet a predictive framework linking implantation parameters to phase transitions remains lacking. In this work, we investigate the emergence of a percolation-driven mechanism underlying bandgap narrowing and magnetic… read more here.
Keywords: bandgap narrowing; implanted gan; ordering implanted; narrowing magnetic ... See more keywords