Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC/Si (111) substrate
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DOI: 10.1063/1.4975630
Abstract: We report the synthesis of highly oriented diamond (HOD) (111) films on 3C-SiC/Si (111) substrates. Bias-enhanced nucleation (BEN) is a key process for the heteroepitaxial growth of HOD films. Conventional long nucleation periods have been… read more here.
Keywords: highly oriented; sic 111; diamond; 111 films ... See more keywords