Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating
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DOI: 10.1016/j.tsf.2018.01.031
Abstract: Abstract Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7–60 μm using DC sputtering to deposit the stressor layer are appropriate… read more here.
Keywords: spalling 100; 100 oriented; increased fracture; controlled spalling ... See more keywords