Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer
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DOI: 10.1016/j.jcrysgro.2016.10.032
Abstract: Abstract Severe melt-back etching has forced the epitaxy of GaN on Si to use an AlN buffer layer for growing high-quality two-dimensional layers, despite its high resistivity. Herein, we report a metal-based pre-orienting layer (POL)… read more here.
Keywords: gan nanostructures; selective area; area growth; pre orienting ... See more keywords