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Published in 2019 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/40/4/042102
Abstract: Utilizing first-principles band structure method, we studied the trends of electronic structures and band offsets of the common-anion heterojunctions GaX/ZnGeX2 (X = N, P, As, Sb). Here, ZnGeX2 can be derived by atomic transmutation of…
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Keywords:
origin anomalous;
gax;
zngex2;
band ... See more keywords