Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor
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DOI: 10.1063/5.0005061
Abstract: p-doped 4H-SiC substrates were implanted with 57Fe ions at energies ranging from 30 to 160 keV and subjected to a rapid thermal annealing in order to produce a homogeneous Fe concentration inside a 100 nm-thick region in… read more here.
Keywords: properties implanted; semiconductor; magnetic properties; origin magnetic ... See more keywords
Origin of magnetic inhomogeneity in Cr- and V-doped topological insulators
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DOI: 10.1103/physrevb.101.241407
Abstract: The quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators at ultralow temperatures. Inhomogeneous ferromagnetism is considered to be one of the main factors that lead to the unexpected low… read more here.
Keywords: topological insulators; doped topological; mathrm; origin magnetic ... See more keywords
Origin of magnetic moments and presence of spin-orbit singlets in Ba 2 YIrO 6
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DOI: 10.1103/physrevb.98.014431
Abstract: While it was speculated that 5$d^4$ systems would possess non-magnetic $J$~=~0 ground state due to strong Spin-Orbit Coupling (SOC), all such systems have invariably shown presence of magnetic moments so far. A puzzling case is… read more here.
Keywords: presence; magnetic moments; spin; spin orbit ... See more keywords
Origin of magnetic excitation gap in double perovskite Sr2FeOsO6
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DOI: 10.1103/physrevb.98.214422
Abstract: ${\mathrm{Sr}}_{2}{\mathrm{FeOsO}}_{6}$ is an insulating double perovskite compound which undergoes antiferromagnetic transitions at 140 (${T}_{\text{N1}}$) and 67 K (${T}_{\text{N2}}$). To study the underlying electronic and magnetic interactions giving rise to this behavior we have performed inelastic… read more here.
Keywords: gap; magnetic excitation; excitation gap; double perovskite ... See more keywords