Origin of random telegraph noise in silicon-based devices: Insights from first-principles study
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DOI: 10.1063/5.0279092
Abstract: The microscopic origin of random telegraph noise (RTN) in semiconductor devices remains a subject of debate. Previous studies proposed several hypotheses involving phosphorus–vacancy center and oxygen–vacancy centers, while recent experimental evidence indicates that it may… read more here.
Keywords: random telegraph; first principles; telegraph noise; origin random ... See more keywords