Probing the origins of magnetism in 2 at% Fe-implanted 4H-SiC
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DOI: 10.1016/j.scriptamat.2020.07.030
Abstract: Abstract Here we reported an about 2 at.% Fe-implanted p-type 4H-SiC Diluted Magnetic Semiconductor (DMS). Scanning Transmission Electron Microscopy (STEM) and Atom Probe Tomography (APT) techniques were used to investigate the origins of ferromagnetic behavior.… read more here.
Keywords: microscopy; magnetism implanted; origins magnetism; spectroscopy ... See more keywords