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Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr03785h
Abstract: The exploitation of p-type oxide semiconductors with excellent optoelectrical properties as well as a simple preparation process is still challenging owing to the difficulty in producing hole carriers which results from strong hole localization in…
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Keywords:
oxide semiconductors;
phototransistor;
doped sno;
orthorhombic doped ... See more keywords