Prevention of Oscillatory False Triggering of GaN-FETs by Balancing Gate-Drain Capacitance and Common-Source Inductance
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DOI: 10.1109/tia.2018.2868272
Abstract: Gallium-nitride-field-effect transistors (GaN-FETs) are promising switching devices with fast switching capability. However, they commonly have low gate threshold voltage, suffering from susceptibility to the false triggering. Particularly, the oscillatory false triggering, i.e., a self-sustaining repetitive… read more here.
Keywords: false triggering; gan fets; oscillatory false; gate ... See more keywords