Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
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DOI: 10.1063/1.5051058
Abstract: We demonstrate the epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy. We prepared patterned SiO2 masks on a (0001) α-Ga2O3/sapphire template, and then α-Ga2O3 islands were regrown selectively on the mask windows. The… read more here.
Keywords: ga2o3; halide vapor; epitaxial lateral; lateral overgrowth ... See more keywords