Innovative multi-threshold gate-overlap tunnel FET (GOTFET) devices for superior ultra-low power digital, ternary and analog circuits at 45-nm technology node
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DOI: 10.1007/s10825-019-01440-1
Abstract: In this paper, four different types of gate-overlap tunnel FET (GOTFET) devices are proposed for ultra-low power applications: (1) generic GOTFETs for digital logic, (2) low- and high-threshold (LVT and HVT) GOTFETs for ternary logic,… read more here.
Keywords: gotfet; gate overlap; overlap tunnel; technology node ... See more keywords