Resistive switching in MIM structure based on overstoichiometric tantalum oxide
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DOI: 10.1016/j.mee.2017.04.041
Abstract: We report on the resistive switching effect in metal-insulator-metal (MIM) structures Pt/Ta2O5+x/Ta with over-stoichiometric tantalum oxide film. These devices exhibit forming-free behavior, Roff/Ron ratio10 and high endurance (108cycles). Based on the experimentally observed correlation between… read more here.
Keywords: overstoichiometric tantalum; effect; tantalum oxide; structure ... See more keywords