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Published in 2021 at "Colloids and Surfaces A: Physicochemical and Engineering Aspects"
DOI: 10.1016/j.colsurfa.2021.126262
Abstract: Abstract Oxygen vacancies (OVs), as intrinsic defects and active sites in semiconductors, can trap electrons and activate O2 under light irradiation, effectively restraining the recombination of photogenerated carriers. The interfacial electric field of heterojunctions can…
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Keywords:
bioi bi2o3;
interfacial electric;
electric field;
ovs bioi ... See more keywords