An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors
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DOI: 10.1063/1.4979649
Abstract: The dependence of device reliability against a variety of stress conditions on the annealing atmosphere was studied using a single metal-oxide thin-film transistor with thermally induced source/drain regions. A cyclical switch between an oxidizing and… read more here.
Keywords: oxidation last; thin film; oxide thin; reliability ... See more keywords