Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing
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DOI: 10.1016/j.apsusc.2017.10.159
Abstract: Abstract Single-crystal silicon carbide (4H-SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for fabrication of next-generation semiconductor devices. In this work, we report a hybrid polishing… read more here.
Keywords: pretreatment; thermal oxidation; oxidation pretreatment; carbon face ... See more keywords