Sub-10 nm patterning of few-layer MoS2 and MoSe2 nanolectronic devices by oxidation scanning probe lithography
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DOI: 10.1016/j.apsusc.2020.148231
Abstract: Abstract The properties of 2D materials devices are very sensitive to the physical, chemical and structural interactions that might happen during processing. Low-invasive patterning methods are required to fabricate devices at the nanoscale. Here we… read more here.
Keywords: mos2 mose2; scanning probe; oxidation scanning; layer ... See more keywords