Photoactivated high-k lanthanum oxide-aluminum oxide (La2O3–Al2O3) alloy-type gate dielectrics for low-voltage-operating flexible transistors
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DOI: 10.1016/j.jallcom.2020.155671
Abstract: Abstract Low-temperature-processable gate dielectrics with high dielectric constants, low leakage current, and good electrical/mechanical stabilities are largely pursued in diverse electronics including flexible transistors, wearable sensors, integrated logic circuits, and various optoelectronic devices. Here, we… read more here.
Keywords: gate dielectrics; lanthanum oxide; flexible transistors; oxide aluminum ... See more keywords