InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
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DOI: 10.3390/ma12010087
Abstract: III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors… read more here.
Keywords: integrated silicon; oxide cavities; ingaas finfets; source drain ... See more keywords