Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4973966
Abstract: We report on the design of the geometry and chip size–controlled structures of microscale light-emitting diodes (micro-LEDs) with a shallow-etched oxide-refilled current aperture and their performance. The proposed structure, which combines an indium-tin-oxide layer and… read more here.
Keywords: microscale light; micro leds; oxide confined; emitting diodes ... See more keywords
Oxide-confined GaAs-based vertical-cavity surface-emitting laser: Measurement and modeling of the strain field
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0145680
Abstract: The strain field of the emitters of one unstressed and two electrically stressed oxide-confined GaAs-based vertical-cavity surface-emitting lasers has been analyzed. The components of the strain tensor in the optical aperture, in the quantum wells,… read more here.
Keywords: based vertical; confined gaas; vertical cavity; strain field ... See more keywords
Oxide-Confined VCSELs for High-Speed Optical Interconnects
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of Quantum Electronics"
DOI: 10.1109/jqe.2018.2817068
Abstract: The electrically pumped vertical-cavity surface-emitting laser (VCSEL) was first demonstrated with metal cavities by Iga (1979); however, the device threshold current was too high. Distributed Bragg reflector cavities proposed by Scifres and Burnham (1975) were… read more here.
Keywords: oxide confined; vcsels high; tex math; confined vcsels ... See more keywords
Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Photonics Technology Letters"
DOI: 10.1109/lpt.2017.2771222
Abstract: We demonstrate a narrow-linewidth heterogeneously integrated Si/III–V laser, where the current confinement in the III–V structure is obtained by oxide isolation rather than by the prevailing ion-implantation technique. This method provides effective electrical isolation as… read more here.
Keywords: heterogeneously integrated; linewidth oxide; oxide confined; integrated iii ... See more keywords