Performance Enhancement of SnS/h-BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method.
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DOI: 10.1021/acsami.2c05534
Abstract: Searching for the counterpart of well-developed two-dimensional (2D) n-type field effect transistors (FETs) is indispensable for complementary logic circuit applications for 2D devices. Although SnS is regarded as a potential candidate for high-performance p-type FETs,… read more here.
Keywords: surface oxide; oxide conversion; surface; type ... See more keywords