Ultrahigh Effective Diffusion in Oxide by Engineering the Interfacial Transporter Channels.
Sign Up to like & getrecommendations! Published in 2023 at "Nano letters"
DOI: 10.1021/acs.nanolett.3c01139
Abstract: Mass storage and removal in solids always play a vital role in technological applications such as modern batteries and neuronal computations. However, they were kinetically limited by the slow diffusional process in the lattice, which… read more here.
Keywords: diffusion; effective diffusion; oxide engineering; engineering interfacial ... See more keywords
Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2024.3363131
Abstract: Previous studies have reported the formation of n+ regions in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) upon doping hydrogen (H) to the AOS channel layer from the deposition atmosphere of interlayer dielectrics (ILD) e.g.… read more here.
Keywords: oxide engineering; bottom gate; thin film; gate oxide ... See more keywords