2D MoS2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202100074
Abstract: Among advanced devices with 2D semiconductors, charge injection memory field effect transistors (CIM FETs) may be one of the most important and practical ones. Reported CIM FETs utilize three layers (for tunneling, trapping, and bulk… read more here.
Keywords: hfo2; oxide interface; memory; hetero stack ... See more keywords
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5054292
Abstract: Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we… read more here.
Keywords: layer; atomic layer; inas oxide; oxide interface ... See more keywords
Spin absorption at a ferromagnetic-metal/platinum-oxide interface
Sign Up to like & getrecommendations! Published in 2019 at "Physical Review B"
DOI: 10.1103/physrevb.99.024432
Abstract: We investigate the absorption of a spin current at a ferromagnetic-metal/Pt-oxide interface by measuring ferromagnetic resonance. The spin absorption was characterized by the magnetic damping of the heterostructure. We show that the magnetic damping of… read more here.
Keywords: mathrm; oxide interface; ferromagnetic metal; spin ... See more keywords