Phosphate incorporation in anodic hafnium oxide memristors
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.149093
Abstract: Abstract The electrochemical fabrication of memristive devices based on Hf is demonstrated. Electrolyte incorporation in memristors is confirmed in oxides grown in 0.1, 0.5 and 1 M phosphate buffers. The impact of phosphate species on conductive… read more here.
Keywords: incorporation anodic; hafnium oxide; incorporation; anodic hafnium ... See more keywords
Bidirectional Volatile Signatures of Metal–Oxide Memristors—Part I: Characterization
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3014854
Abstract: The multistate capabilities as well as the intrinsic integrating properties of memristors deem them suitable candidates for the realization of novel neuromorphic applications. To date, much of their prestige arises mostly from the versatility that… read more here.
Keywords: bidirectional volatile; memristors part; metal oxide; signatures metal ... See more keywords
Bidirectional Volatile Signatures of Metal-Oxide Memristors—Part II: Modeling
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3022343
Abstract: Volatility in metal-oxide resistive random access memory (RRAM) families has mostly been treated as an unwanted side-effect, although recently there are trends to interpret such behavior as an additional technological feature. To date, the field… read more here.
Keywords: bidirectional volatile; metal oxide; volatility; signatures metal ... See more keywords