Effect of O2- migration in Pt/HfO2/Ti/Pt structure
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DOI: 10.1007/s10832-017-0077-y
Abstract: In this paper, we study the post-fabrication phenomenon of natural oxidation of the Ti layer observed in a Pt/HfO2/Ti/Pt Resistive Random Access Memory (OxRRAM) stack with no external influence. We identify that the resistance ratio… read more here.
Keywords: resistance ratio; layer; effect; oxrram stack ... See more keywords