Post-annealing optimization of the heteroepitaxial La-doped SrSnO3 integrated on silicon via ALD.
Sign Up to like & getrecommendations! Published in 2023 at "Nanoscale"
DOI: 10.1039/d2nr06861c
Abstract: Wide band gap (WBG) alkaline-earth stannate transparent oxide semiconductors (TOSs) have attracted increasing attention in recent years for their high carrier mobility and outstanding optoelectronic properties, and have been applied widely in various devices, such… read more here.
Keywords: lsso bto; doped srsno3; ald; post ... See more keywords
Oxygen annealing induced changes in defects within β-Ga2O3 epitaxial films measured using photoluminescence
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/abdefb
Abstract: In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor phase epitaxy induced by annealing at different… read more here.
Keywords: annealing induced; induced changes; physics; non radiative ... See more keywords