Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching
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DOI: 10.1002/aelm.202000439
Abstract: This work investigates the transition from digital to gradual or analog resistive switching in yttrium oxide‐based resistive random‐access memory devices. It is shown that this transition is determined by the amount of oxygen in the… read more here.
Keywords: yttrium oxide; oxide based; oxygen engineering; analog ... See more keywords