Effects of oxygen-inserted layers on diffusion of boron, phosphorus, and arsenic in silicon for ultra-shallow junction formation
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DOI: 10.1063/1.5022078
Abstract: The effects of oxygen-inserted (OI) layers on the diffusion of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) are investigated, for ultra-shallow junction formation by high-dose ion implantation followed by rapid thermal annealing.… read more here.
Keywords: inserted layers; oxygen inserted; layers diffusion; junction ... See more keywords
Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation
Sign Up to like & getrecommendations! Published in 2020 at "AIP Advances"
DOI: 10.1063/1.5144507
Abstract: The effects of oxygen-insertion technology and low-energy fluorine (F) implantation on the Schottky barrier height (ΦBp) of a Pt/Ti/p-type Si metal–semiconductor contact are studied via electrical characterizations of Schottky diodes, physical analyses by secondary ion… read more here.
Keywords: schottky barrier; barrier height; inserted layers; oxygen inserted ... See more keywords