Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with SubĪ¼m Channel Lengths.
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DOI: 10.1021/acsami.2c07258
Abstract: Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic ellipsometry… read more here.
Keywords: gate stack; oxygen interstitial; thin films; interstitial defects ... See more keywords