Properties of 4H silicon carbide detectors in the radiation detection of 86 MeV oxygen particles
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DOI: 10.1016/j.diamond.2016.09.011
Abstract: Abstract Two 4H silicon carbide (SiC) radiation detectors based on Schottky diode were fabricated with high-quality lightly doped 4H-SiC epitaxial layer with sensitive volumes of 5 mm × 5 mm × 20 μm and 3 mm × 3 mm × 100 μm; their dark current were in the range… read more here.
Keywords: detection; silicon carbide; oxygen particles; carbide detectors ... See more keywords