Growth and ripening of oxygen precipitation in neutron-irradiated Czochralski silicon
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DOI: 10.1016/j.mssp.2017.11.010
Abstract: Abstract The effects of the vacancy-related defects introduced by neutron irradiation on oxygen precipitation in Czochralski silicon have been elaborately investigated. It is found that the vacancy-related defects significantly enhance the nucleation of oxygen precipitates… read more here.
Keywords: oxygen; oxygen precipitates; czochralski silicon; oxygen precipitation ... See more keywords