Enhancement of electron mobility in GaAs/AlxGa1-xAs square-parabolic double quantum well HEMT structure
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DOI: 10.1007/s00542-018-3727-3
Abstract: We show that the enhancement of electron mobility μ as function of well width w can be achieved in a GaAs/AlxGa1-xAs square-parabolic double quantum well (SPDQW) high electron mobility transistor (HEMT) structure. We consider the… read more here.
Keywords: quantum well; double quantum; electron mobility; quantum ... See more keywords