Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SiC/Si Cascode Devices
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DOI: 10.1109/tie.2021.3070519
Abstract: Silicon carbon (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) and SiC/Si cascode devices are two popular normally-off SiC power devices. In terms of the rated voltage and current of a single chip, there are always some… read more here.
Keywords: mosfets sic; cascode devices; paralleling suitability; sic mosfets ... See more keywords