Diode parameters and ultraviolet light detection characteristics of n-type silicon/p-type nanocrystalline diamond heterojunctions at different temperatures
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DOI: 10.1016/j.tsf.2020.138222
Abstract: Abstract n-Type silicon (Si)/p-type boron (B)-doped ultrananocrystalline diamond (UNCD) heterojunctions were manufactured through coaxial arc plasma deposition, and were examined in terms of the diode parameters and ultraviolet (UV) photodetection at different temperatures. The structure… read more here.
Keywords: different temperatures; silicon type; diode parameters; parameters ultraviolet ... See more keywords